Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same
US9676047B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2014 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Dec 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.