Laser processing of sapphire substrate and related applications
US9676167B2 · kind B2 · utility
14Cited by
120References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 31, 2014 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Nov 10, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of laser processing a material to form a separated part. The method includes focusing a pulsed laser beam into a laser beam focal line, viewed along the beam propagation direction, directed into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a hole or fault line along the laser beam focal line within the material, and directing a defocused carbon dioxide (CO2) laser from a distal edge of the material over the plurality of holes to a proximal edge of the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.