Chemical mechanical polishing composition and process
US9676966B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2003 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Jun 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
To provide a polishing slurry composition which effectively reduces the occurrence of scratches, and a method of polishing which reduces the occurrence of scratches while realizing an economical polishing step. The aforementioned object is attained by using a polishing slurry composition for polishing a semiconductor substrate containing a metal oxide particle, at least one water-soluble organic polymer and water, said slurry composition characterized in that, when a test substrate having a metal film, a shallow trench isolation film or dielectric film is polished by varying a rate of a polishing pad equipped in a polishing apparatus under a constant polishing pressure to achieve a maximum polishing rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.