Scintillator
US9678223B2 · kind B2 · utility
4Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2012 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Aug 17, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K2004/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An afterglow property of cesium iodide:thallium (CsI:Tl), in which CsI is a host material and doped with thallium, is improved. It is possible to improve the afterglow property of a scintillator by doping a crystal material including CsI (cesium iodide), as a host material, and thallium (Tl), as a luminescent center, with bismuth (Bi).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.