Carrier-depletion based silicon waveguide resonant cavity modulator with integrated optical power monitor
US9678370B2 · kind B2 · utility
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Key dates
| Filing date | Jul 23, 2014 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Oct 12, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/15
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A carrier-depletion based silicon waveguide resonant cavity modulator includes a silicon waveguide based resonant cavity. The resonant cavity includes an optical modulation section and an optical power monitoring section. The optical power monitoring section includes an integrated lateral PIN diode including a doping compensated I region having a high defect density and a low net free carrier concentration. The doping compensated I region may be formed by performing a P-type implantation step and an N-type implantation step with overlapping ion implantation windows.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.