Photoresist simulation
US9679116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2013 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Aug 20, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A processor based method for measuring dimensional properties of a photoresist profile by determining a number acid generators and quenchers within a photoresist volume, determining a number of photons absorbed by the photoresist volume, determining a number of the acid generators converted to acid, determining a number of acid and quencher reactions within the photoresist volume, calculating a development of the photoresist volume, producing with the processor a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume, and measuring the dimensional properties of the photoresist profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.