Patent · US Active

Method for fabrication of ceramic dielectric films on copper foils

US9679705B2 · kind B2 · utility

0Cited by
6References
3Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 25, 2015
Grant dateJun 13, 2017
Priority date
Expiry dateMar 18, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/266
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.