SiC epitaxial wafer and method for manufacturing the same
US9679767B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Jun 19, 2013 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Oct 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.