Semiconductor device and method for manufacturing same
US9679910B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 27, 2015 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Oct 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/00
Abstract
According to one embodiment, a semiconductor memory device includes: a substrate; a first stacked body; a semiconductor film; a charge storage film; and a second stacked body. The first stacked body includes: a plurality of first insulating layers; and a plurality of electrode layers. The second stacked body includes: a plurality of second insulating layers; a first insulating film provided between the plurality of second insulating layers and including a material different from that of the plurality of first insulating layers, the plurality of second insulating layers, and the plurality of electrode layers; and a second insulating film provided between the first insulating film and the substrate via the plurality of second insulating layers, including a same material as the first insulating film, and having lower film density than the first insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.