Semiconductor device
US9679943B2 · kind B2 · utility
3Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2015 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | May 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a first magnetic layer including a plurality of first regions configuring a plurality of memory cells and spaced apart from each other on a substrate, and a second region encompassing the plurality of first regions and electrically isolated from the first regions, a tunnel barrier layer disposed on the first magnetic layer, and a second magnetic layer disposed on the tunnel barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.