Semiconductor device

US9679971B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Tatsuo Shimizu · Shinagawa, JP
• Ryosuke Iijima · Setagaya, JP
• Kazuto Takao · Tsukuba, JP

Key dates

• Filing date: Aug 31, 2016
• Grant date: Jun 13, 2017
• Expiry date: Aug 31, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/111

Abstract

A semiconductor device of an embodiment includes an n-type SiC region, a metal layer, and a conductive layer provided between the n-type SiC region and the metal layer, the conductive layer including titanium (Ti), oxygen (O), at least one first element from zirconium (Zr) and hafnium (Hf), and at least one second element from vanadium (V), niobium (Nb), and tantalum (Ta).