Semiconductor device and method of manufacturing the same
US9679982B2 · kind B2 · utility
3Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2014 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Jan 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to a method of manufacturing a semiconductor device, hard mask lines are formed in parallel in a substrate and the substrate between the hard mask lines is etched to form grooves. A portion of the hard mask line and a portion of the substrate between the grooves are etched. A top surface of the etched portion of the substrate between the grooves is higher than a bottom surface of the groove. A conductive layer is formed to fill the grooves. The conductive layer is etched to form conductive patterns in the grooves, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.