Insulated gate type switching device and method for manufacturing the same
US9679989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2016 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Aug 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an insulated gate type switching device includes forming a gate trench that has a first portion with a first width in a first direction and a second portion with a second width in the first direction, the second width being wider than the first width. In an oblique implantation, second conductivity type impurities are irradiated at an irradiation angle inclined around an axis orthogonal to the first direction. The first width, the second width, and the irradiation angle are set such that the second conductivity type impurities are suppressed, at a first side surface of the first portion, from being implanted into a part below a lower end of a second semiconductor region, and at a second side surface of the second portion, the impurities are implanted into the part below the lower end of the second semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.