High voltage semiconductor device
US9680009B2 · kind B2 · utility
8Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2015 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Oct 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some embodiments, a semiconductor device includes a transistor, an isolation component, and a conductive layer. The transistor includes a source region and a drain region. The isolation component surrounds the source region. The conductive layer is configured for interconnection of the drain region. The conductive component is between the conductive layer and the isolation component, configured to shield the isolation component from an electric field over the isolation component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.