Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
US9680049B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 19, 2014 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Mar 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/036
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
In at least one embodiment, a method is designed to produce optoelectronic semiconductor chips. A carrier assembly, which is a sapphire wafer, is produced. A semiconductor layer sequence is applied to the carrier assembly. The carrier assembly and the semiconductor layer sequence are divided into the individual semiconductor chips. The dividing is implemented by producing a multiplicity of selectively etchable material modifications in the carrier assembly in separation region(s) by focused, pulsed laser radiation. The laser radiation has a wavelength at which the carrier assembly is transparent. The dividing includes wet chemically etching the material modifications, such that the carrier assembly is singulated into individual carriers for the semiconductor chips solely by the wet chemical etching or in combination with a further material removal method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.