Patent · US Active

Optoelectronic gan-based component having increased ESD resistance via a superlattice and method for the production thereof

US9680052B2 · kind B2 · utility

0Cited by

0References

16Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Andreas Löffler · Neutraubling, DE
Tobias Meyer · Durham, US
Adam Bauer · Donaustauf, DE
Christian Leirer · Friedberg, DE

Key dates

Filing date	Apr 23, 2014
Grant date	Jun 13, 2017
Priority date	—
Expiry date	Apr 23, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8252
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An optoelectronic component includes a semiconductor layer structure having a quantum film structure, and a p-doped layer arranged above the quantum film structure, wherein the p-doped layer includes at least one first partial layer and a second partial layer, and the second partial layer has a higher degree of doping than the first partial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.