Hetero-substrate, nitride-based semiconductor light emitting device, and method for manufacturing the same
US9680055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2013 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Oct 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
Abstract
A hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same are provided. The hetero-substrate may include a substrate including a silicon semiconductor, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including a nitride semiconductor, a second semiconductor layer disposed on the first semiconductor layer and including a first conductive type nitride semiconductor having a first doping concentration, and a stress control structure disposed between the first semiconductor layer and the second semiconductor layer and including at least one stress compensation layer and at least one third semiconductor layer including a first conductive type nitride semiconductor having a second doping concentration that is the same or lower than the first doping concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.