Ultraviolet light-emitting device with a heavily doped strain-management interlayer
US9680056B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2016 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Jul 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A heteroepitaxy strain-management structure for a light emitting device includes: a substrate or template; an epitaxial layer to be epitaxially formed over the substrate or template, wherein a calculated in-plane compressive strain to be exerted by the substrate or template to the epitaxial layer is equal to or larger than 1%; and a heavily doped interlayer inserted in-between the epitaxial layer and the substrate or template; wherein the heavily doped interlayer is of substantially the same material composition as that of the epitaxial layer, with a thickness of 40-400 nm, and doped at a doping level in the range of 5×1019 to 5×1020 cm−3. Also provided is an ultraviolet light emitting device having a heteroepitaxy strain-management structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.