Group-III nitride structure including a fine wall-shaped structure containing a group-III nitridesemiconductor crystal and method for producing a group-III nitride structure including a fine wall-shaped structure containing a group-III nitride semiconductor crystal
US9680058B2 · kind B2 · utility
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17References
5Claims
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Key dates
| Filing date | Nov 26, 2008 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | May 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A group-III nitride structure includes a substrate 102 and a fine wall-shaped structure 110 disposed to stand on the substrate 102 in a vertical direction relative to a surface of the substrate 102 and extending in an in-plane direction of the substrate 102. The fine wall-shaped structure 110 contains a group-III nitride semiconductor crystal, and h is larger than d assuming that the height of the fine wall-shaped structure 110 is h and the width of the fine wall-shaped structure 110 in a direction perpendicular to the height direction and the extending direction is d.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.