Semiconductor light-emitting device and semiconductor light-emitting device array
US9680063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2016 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | May 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor light-emitting device comprises an optical semiconductor multilayer disposed above a support substrate, which has a structure in which a first semiconductor layer having a first conductivity type, an active layer having light emitting properties, and a second semiconductor layer having a second conductivity type different from the first conductivity type are sequentially stacked from the support substrate side, in which a groove, which has a height exceeding at least the active layer from the support substrate side, is formed along an outer edge of the optical semiconductor multilayer, and which includes an external region being a region further outside than the groove, an inner region being a region further inside than the groove, and a connection region corresponding to a region where the groove is provided, in plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.