Ferromagnetic tunnel junction element and method of driving ferromagnetic tunnel junction element
US9680088B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 24, 2014 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Dec 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a tunnel junction element having a ferromagnetic free layer, an insulating layer and a ferromagnetic fixed layer, in order to reduce the current necessary for spin-transfer magnetization reversal operation in the tunnel junction element, the ferromagnetic free layer comprises first and second ferromagnetic layers, a nonmagnetic metal layer is provided between these ferromagnetic layers, the nonmagnetic metal layer is such that magnetic coupling is preserved between the first and second ferromagnetic layers, also such that there is no influence on the crystal growth of the first and second ferromagnetic layers, the first ferromagnetic layer and the second ferromagnetic layer are placed such that the first ferromagnetic layer is in contact with the insulating layer, and the second ferromagnetic layer has a smaller magnetization than the first ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.