Device for transferring photogenerated charges at high frequency and applications
US9681077B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 11, 2012 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Sep 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A device for transferring charges photogenerated in a portion of a semiconductor layer delimited by at least two parallel trenches, each trench including, lengthwise, at least a first and a second conductive regions insulated from each other and from the semiconductor layer, including the repeating of a first step of biasing of the first conductive regions to a first voltage to form a volume accumulation of holes in the area of this portion located between the first regions, while the second conductive regions are biased to a second voltage greater than the first voltage, and of a second step of biasing of the first regions to the second voltage and of the second regions to the first voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.