Apparatuses and methods utilizing etch stop layers
US9683295B2 · kind B2 · utility
0Cited by
6References
24Claims
0Family size
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Key dates
| Filing date | May 24, 2016 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | May 24, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.