Ultraviolet semiconductor sensor device and method of measuring ultraviolet radiation
US9683889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2014 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13024
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photodiode (2) and a further photodiode (3) are arranged in a substrate (1) at or near a main surface (10). The photodiodes are formed and arranged in such a manner that in case of incident ultraviolet radiation (26) the electric signal from the photodiode (2) is larger than the further electric signal from the further photodiode (3). In particular, the first photodiode may be more sensitive to ultraviolet radiation than the further photodiode. The electric signal from the photodiode is attenuated by the further electric signal and thus yields an electric signal primarily measuring the incident ultraviolet radiation. The attenuation of the electric signal from the first photodiode may be achieved internally using an integrated circuit (25) or externally using a separate device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.