Method and apparatus for determining an actual junction temperature of an IGBT device

US9683898B2 · kind B2 · utility

Assignee

• ABB Schweiz AG · CH

Inventors

• Vinoth Sundaramoorthy · Wettingen, CH
• Enea Bianda · Baden, CH
• Richard Bloch · Goldau, CH
• Iulian Nistor · Niederweningen, CH
• Gerold Knapp · Ehrendingen, CH

Key dates

• Filing date: Mar 23, 2016
• Grant date: Jun 20, 2017
• Expiry date: Mar 23, 2036

Classification

• Technology area (CPC G): Physics
• CPC primary: G01K7/01
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (IC) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of;