Pixel structure and fabrication method thereof
US9684216B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Sep 14, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/134372
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pixel structure includes a first patterned transparent conductive layer, an active layer, an insulating layer and a second patterned transparent conductive layer. The first patterned transparent conductive layer is disposed on a substrate and includes a source, a drain and a pixel electrode connected to the drain. The active layer connects the source and the drain. The insulating layer covers the source, the drain and the active layer. The second patterned transparent conductive layer is disposed on the insulating layer and includes a gate disposed above the active layer and a common electrode disposed above the pixel electrode. A fabrication method of a pixel structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.