Sequential infiltration synthesis for enhancing multiple-patterning lithography
US9684234B2 · kind B2 · utility
402Cited by
5References
14Claims
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Key dates
| Filing date | May 24, 2013 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | May 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.