Devices and methods for controlling magnetic anisotropy with localized biaxial strain in a piezoelectric substrate
US9685214B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2015 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Jun 15, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0095
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Devices and methods for controlling magnetic anisotropy and orientation of magnetic single domain structures between stable states are provided based on piezoelectric thin films and patterned electrodes. By using patterned electrodes, piezoelectric strain is manipulated to achieve a highly localized biaxial strain in a piezoelectric substrate and rotate the magnetic anisotropy of magnetic materials. Reorientation of a magnetic single domain between different stable states is accomplished by pulsing voltage across pairs of electrodes. Since only a small region surrounding the electrodes is strained, the methods can be applied to arrays of indexed magnetic elements and to piezoelectric thin films clamped to silicon base substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.