Patent · US Active

Method for operating a conductive bridging memory device

US9685229B2 · kind B2 · utility

0Cited by

2References

11Claims

0Family size

Assignees

IMEC VZW · BE
Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

Ludovic Goux · Hannut, BE
Attilio Belmonte · Rende, IT

Key dates

Filing date	Dec 2, 2015
Grant date	Jun 20, 2017
Priority date	—
Expiry date	Dec 2, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/0092
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method is disclosed for operating a Conductive Bridge Random Access Memory (CBRAM) device that includes an electrolyte element sandwiched between a cation supply top electrode and a bottom electrode. The method comprises conditioning the CBRAM device by applying a forming current pulse having a pulse width (tf) of 100 ns or less and a pulse amplitude (If) of 10 uA or less, and when programming, setting the conditioned CBRAM device to a Low Resistance State (LRS) by applying a set current pulse having a pulse width (ts) of 100 ns or less and a pulse amplitude (Is) equal to or larger than the forming current pulse amplitude (If).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.