Semiconductor device for electrostatic discharge protection

US9685431B2 · kind B2 · utility

Assignee

• SOFICS BVBA · BE

Inventors

• Bart Sorgeloos · Gistel, BE
• Benjamin Van Camp · Brugge, BE
• Olivier Marichal · Sint-Niklaas, BE

Key dates

• Filing date: Sep 29, 2014
• Grant date: Jun 20, 2017
• Expiry date: Sep 29, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/251

Abstract

Disclosed is an electrostatic discharge (ESD) protection circuit. The ESD protection circuit may include a silicon controller rectifier (SCR) which may be triggered via at least one of its first trigger gate or second trigger gate. The ESD protection circuit may further include a highly doped region coupled to either the anode or cathode of the SCR, wherein the highly doped region may provide additional carriers to facilitate triggering of the SCR during an ESD event, whereby the SCR may be triggered more quickly.