Patent · US Active

Capacitor device

US9685433B2 · kind B2 · utility

4Cited by

4References

16Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventor

Chao Li · Zhengzhou, CN

Key dates

Filing date	Sep 24, 2014
Grant date	Jun 20, 2017
Priority date	—
Expiry date	Sep 24, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In some embodiments, a capacitor device includes a metal-oxide-metal (MOM) capacitor array and a varactor array configured overlapping with the MOM capacitor array. The MOM capacitor array includes a first MOM capacitor unit. The first MOM capacitor unit includes a first electrode pattern and a second electrode pattern in a first metallization layer. The first electrode pattern includes a plurality of first fingers and a first bus interconnecting the plurality of first fingers. The second electrode pattern includes a plurality of second fingers and a second bus interconnecting the plurality of second fingers. The varactor array includes a first varactor unit. The first varactor unit includes a first electrode contacting region and a second electrode contacting region. The first electrode pattern contacts the first electrode contacting region. The second electrode pattern contacts the second electrode contacting region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.