Bipolar junction transistor structure
US9685502B2 · kind B2 · utility
10Cited by
5References
20Claims
0Family size
Inventor
Key dates
| Filing date | Jul 13, 2015 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Jul 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/831
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
We disclose a bi-directional bipolar junction transistor (BJT) structure, comprising: a base region of a first conductivity type, wherein said base region constitutes a drift region of said structure; first and second collector/emitter (CE) regions, each of a second conductivity type adjacent opposite ends of said base region; wherein said base region is lightly doped relative to said collector/emitter regions; the structure further comprising: a base connection to said base region, wherein said base connection is within or adjacent to said first collector/emitter region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.