Patent · US Active

Light-emitting element having a reflective structure with high efficiency

US9685588B2 · kind B2 · utility

1Cited by
0References
18Claims
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Key dates

Filing dateMar 29, 2016
Grant dateJun 20, 2017
Priority date
Expiry dateMar 29, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/882

Abstract

An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.