Method for producing a resistive random access memory
US9685610B2 · kind B2 · utility
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3References
8Claims
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Key dates
| Filing date | Oct 7, 2016 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Oct 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.