Thin film transistor, its manufacturing method, array substrate and display device

US9685621B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Yingtao Xie · Beijing, CN
• Shihong Ouyang · Lo Wu, CN
• Shucheng Cai · Beijing, CN
• Qiang Shi · Suzhou, CN
• Ze Liu · Beijing, CN
• Honhang Fong · Beijing, CN

Key dates

• Filing date: Jul 16, 2015
• Grant date: Jun 20, 2017
• Expiry date: Jul 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/233

Abstract

The present disclosure provides a thin film transistor (TFT), its manufacturing method, an array substrate and a display device. The method for manufacturing the TFT includes steps of forming patterns of a gate electrode, a source electrode and a drain electrode on a base substrate; and forming a pattern of an active layer and a pattern of a passivation layer covering the active layer by a single patterning process. The passivation layer is made of a negative or positive photoresist, and the active layer is insulated from the gate electrode and electrically connected to the source electrode and the drain electrode.