Overvoltage protection component
US9685778B2 · kind B2 · utility
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1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2015 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Oct 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a vertical Shockley diode and a first vertical transistor. The diode is formed by, from top to bottom of a semiconductor substrate, a first region of a first conductivity type, a substrate of a second conductivity type, and a second region of the first conductivity type having a third region of the second conductivity type formed therein. The vertical transistor is formed by, also from top to bottom, a portion of the second region and a fourth region of the second conductivity type. The third and fourth regions are electrically connected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.