Segmented graphene growth on surfaces of a patterned substrate layer and devices thereof
US9688540B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 15, 2014 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Jan 15, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2204/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a graphite-based structure on a substrate comprises patterning the substrate thereby forming a plurality of elements on the substrate. Each respective element in the plurality of elements is separated from an adjacent element on the substrate by a corresponding trench in a plurality of trenches on the substrate and each respective element in the plurality of elements has a corresponding top surface. The method further comprises segmentedly depositing a graphene initiating layer onto the top surface of each respective element in the plurality of elements; and generating graphene using the graphene initiating layer thereby forming the graphite-based structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.