Semiconductor pressure sensor
US9689767B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 10, 2014 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Feb 27, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/04
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor pressure sensor for measuring an external pressure exerted on the sensor, comprises a membrane, and a bridge comprising a first and a second resistor pair, arranged on a first resp. second side portion of the membrane. The first resistor pair comprises a first and a second resistor (R1, R2) comprising elongated piezo-resistive strips connected in series, and located closely together, such that R1 and R2 have substantially the same temperature. The sensor has a reduced sensitivity to: a temperature gradient over the membrane, and optionally also a non-uniform stress gradient caused by packaging and a inhomogeneous disturbing electric field perpendicular to the sensor. The piezo-resistive strips of the first and second resistor may be oriented in orthogonal directions of maximum piezo-resistive coefficients. A second bridge may be added outside the membrane, for compensating for package pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.