Patent · US Active

Method and device for measuring changes over time of the electrical performance of an FDSOI transistor

US9689913B2 · kind B2 · utility

0Cited by

0References

9Claims

0Family size

Assignees

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
STMicroelectronics (Crolles 2) SAS · FR

Inventors

Xavier GARROS · Grenoble, FR
Laurent Brunet · Léguevin, FR

Key dates

Filing date	Feb 6, 2013
Grant date	Jun 27, 2017
Priority date	—
Expiry date	Aug 28, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG06F17/00
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method for measuring the changes of the electrical performance of an FDSOI transistor between a first and a second state of the transistor after an operating period t1, including the following steps:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.