Method for manufacturing a semiconductor device and semiconductor device manufactured by the same
US9690896B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2016 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Apr 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0193
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided. The method includes disposing pre-conductive lines and post-conductive lines for forming first and second cells. The first and second cells are adjacent to each other in a first direction. A first conductive line of the first cell extends in a second direction perpendicular to the first direction and is adjacent to a boundary between the first and second cells. A second conductive line and a third conductive line of the second cell extend in the first direction and are adjacent to the boundary. The second and third conductive lines are respectively disposed on two non-adjacent tracks, among a plurality of tracks that extend in the first direction. The first conductive line intersects one of the two non-adjacent tracks and one track disposed between the two non-adjacent tracks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.