Circuits and devices based on spin hall effect to apply a spin transfer torque with a component perpendicular to the plane of magnetic layers
US9691458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2014 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Oct 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device based on a spin Hall effect and spin-transfer torque (STT) effect is provided to include a magnetic tunneling junction (MTJ) element including a free magnetic layer structured to have a magnetization direction that can be changed by spin-transfer torque; an electrically conducting magnetic layer structure exhibiting a spin Hall effect (SHE) and, in response to an applied in-plane charge current, generating a spin-polarized current of a magnetic moment oriented in a predetermined direction having both an in-plane magnetic moment component parallel to a surface of the electrically conducting magnetic layer structure and a perpendicular magnetic moment component perpendicular to the surface of the electrically conducting magnetic layer structure. The magnetization direction of the free magnetic layer is capable of being switched by the spin-polarized current via a spin-transfer torque (STT) effect. This device can be configured in a 3-terminal configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.