Method for manufacturing fin structure

US9691624B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huilong Zhu · Poughkeepsie, US
• Miao Xu · Nanhu, CN
• Jun Luo · Chongqing, CN
• Chunlong Li · Beijing, CN
• Guilei Wang · Beijing, CN

Key dates

• Filing date: Dec 14, 2012
• Grant date: Jun 27, 2017
• Expiry date: Dec 14, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Provided is a method for manufacturing a fin structure. The method may include forming an initial fin on a substrate, forming a dielectric layer on the substrate to cover the initial fin, planarizing the dielectric layer by sputtering, and further etching the dielectric layer back to expose a portion of the initial fin, wherein the exposed portion serves as a fin.