Patent · US Active

Semiconductor device and method for manufacturing the same

US9691676B2 · kind B2 · utility

5Cited by
0References
15Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 24, 2013
Grant dateJun 27, 2017
Priority date
Expiry dateMar 14, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2225/06589
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a first semiconductor chip including a first surface and a plurality of first electrodes disposed on the first surface; a second semiconductor chip including a second surface which faces the first surface, a plurality of second electrodes each of which includes at least one end disposed on the second surface, and a plurality of first protrusions each of which surrounds the one end of each of the second electrodes on an electrode by electrode basis; a plurality of conductive joint materials each of which joins a third electrode included in the first electrodes to the one end of an electrode which faces the third electrode among the second electrodes; and a plurality of first underfill resins each of which is disposed inside one of the first protrusions and covers one of the conductive joint materials on a material by material basis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.