Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the same
US9691684B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2014 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Sep 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device is provided which includes a through-silicon via (TSV) structure and one or more decoupling capacitors, along with a method of manufacturing the same. The integrated circuit device may include a semiconductor structure including a semiconductor substrate, a TSV structure passing through the semiconductor substrate, and a decoupling capacitor formed in the semiconductor substrate and connected to the TSV structure. The TSV structure and the one or more decoupling capacitors may be substantially simultaneously formed. A plurality of decoupling capacitors may be disposed within a keep out zone (KOZ) of the TSV structure. The plurality of decoupling capacitors may have the same or different widths and/or depths. An isopotential conductive layer may be formed to reduce or eliminate a potential difference between different parts of the TSV structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.