Zener triggered silicon controlled rectifier with small silicon area

US9691753B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Lei Zhong · Lo Wu, CN
• Hongwei Li · Burnaby, CA
• Wei Lei · Campbell, US
• Huijuan Cheng · Shanghai, CN

Key dates

• Filing date: Apr 7, 2016
• Grant date: Jun 27, 2017
• Expiry date: Apr 7, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/619

Abstract

A semiconductor device includes a P-type semiconductor substrate, an N-well and a P-well disposed adjacent to each other and extending along a first direction within the P-type semiconductor substrate, a first N+ doped region and a first P+ doped region extending along the first direction within the N-well and spaced away from each other along a second direction perpendicular to the first direction, a second N+ doped region and a second P+ doped region extending along the first direction within the P-well and spaced away from each other along the second direction, and a plurality of third N+ doped regions and a plurality of P+ doped regions alternatively disposed in a junction region formed between the N-well and P-well the third N+ doped regions. The third N+ doped regions and the third P+ doped regions form a Zener diode.