Thin film transistor substrate and display using the same
US9691799B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2015 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Feb 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/471
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same. A display includes a first thin film transistor including a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.