Semiconductor device including spacers having different dimensions
US9691867B2 · kind B2 · utility
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2References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 22, 2016 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Aug 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28088
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.