Photodetector
US9691932B2 · kind B2 · utility
9Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2015 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Aug 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to a photodetector includes a first light detection layer and a reflective layer. The first light detection layer has a first surface and a second surface on a side opposite to the first surface. The first light detection layer includes a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si. The reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area. The reflective layer reflects at least part of light in a near-infrared range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.