Patent · US Active

Nitride semiconductor structure

US9691940B2 · kind B2 · utility

0Cited by
10References
17Claims
0Family size

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Inventors

Key dates

Filing dateMay 6, 2016
Grant dateJun 27, 2017
Priority date—
Expiry dateMay 6, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/825
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A nitride semiconductor structure including a substrate, a cap layer, a nucleation layer, a transition layer and a composite buffer structure is provided. The cap layer is located on the substrate. The nucleation layer is located between the substrate and the cap layer. The transition layer is located between the nucleation layer and the cap layer, wherein the transition layer is an AlxGaN layer. The composite buffer structure is located between the transition layer and the cap layer. The composite buffer structure includes a first composite buffer layer, wherein the first composite buffer layer includes a plurality of first AlyGaN layers and a plurality of first GaN layers alternately stacking with each other, and the x is equal to the y.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.