Magnetic memory and method for manufacturing the same
US9691968B2 · kind B2 · utility
4Cited by
0References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 24, 2015 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Apr 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
Abstract
According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, an electrode provided on the substrate, a first insulating film surrounding a side surface of the electrode. The first insulating film contains oxygen. The magnetic memory further includes a second insulating film provided between the electrode and the first insulating film, and surrounding the side surface of the electrode. The second insulating film contains nitrogen. A magnetoresistance effect element is provided on the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.